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tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 1 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications point - to - point radio ku - b and vsat qfn 5x5mm 24 l product features functional block diagram frequency range: 12.5 C toi: 41 dbm power: 31 .5 dbm psat, 30 dbm p1db gain: 25 db return loss: 10 db nf : 7.5 db integrated power detector bias: vd = 6 v, id = 650 m a, vg = - 0.55 v typical package dimensions: 5.0 x 5 .0 x 0.85 mm general description pin configuration the triquint tga 25 27 - sm is a ku - band packaged power amplifier. the tga 25 27 - sm operates from 12.5 to 15.5 ghz and is designed using triquints power pin # symbol 1, 2, 3, 5, 6, 9, 12, 13 , 1 4, 15, 17 n/c 4 rf i n 7, 8, 23, 24 vg 16 rf o ut 10, 11, 20, 21 vd 18 vref 19 vdet 22 gnd ordering information part no. eccn description tga 25 27 - sm 3a001.b.2 . c ku - band power amplifier standard t/r size = 5 00 pieces on a 7 reel. 1 2 3 9 8 7 4 5 6 12 11 10 18 17 16 15 14 13 22 23 24 19 20 21
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 2 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,v d + 8 v gate voltage,v g - 3 to 0 v drain current , i d 1.12 a gate current, i g - 5.5 to 88 ma power dissipation , pdiss 9 w rf input power, cw, 50,t = 25oc o c mounting temperature (30 seconds) 260 o c storage temperature - 40 to 15 0 o c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typ ical max units v d 6 v i d 650 m a i d _d rive (under rf drive) 850 m a v g - 0.5 5 v electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 oc, vd = 6 v, id = 650 m a, vg = - 0.5 5 v typical . parameter min typical max units operational frequency range 12.5 15.5 ghz gain 2 5 db input return loss - 1 0 db output return loss - 1 0 db output power @ saturation 3 1 .5 dbm output power @ 1 db gain compression 3 0 dbm output toi @ pout/tone = 20 dbm 4 1 dbm noise figure 7.5 db gain temperature coefficient - 0. 033 db/c power temperature coefficient - 0.005 dbm/c
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 3 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 11.5 c/w channel temp erature (tch), and median lifetime (tm) tbase = 85 c, vd = 6 v, id = 650 m a, pdiss = 3.9 w tch = 130 c tm = 5.9 e+6 hours channel temperature ( tch ) , and median lifetime (tm) under rf drive tbase = 85 c, vd = 6 v, id = 850 ma, pout = 32 dbm, pdiss = 3.5 w tch = 125 c tm = 9.5 e+ 6 hours 1 .e+ 04 1.e+05 1.e+06 1 .e+ 07 1 .e+ 08 1 .e+ 09 1.e+10 1.e+11 1 .e+ 12 1 .e+ 13 1.e+14 25 50 75 100 125 150 175 200 median lifetime, tm, (hours) channel temperature, tch, ( c) median lifetime (tm) vs. channel temperature (tch) fet 3
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 4 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance 0 5 10 15 20 25 30 35 40 12 14 16 18 20 22 24 26 28 10 11 12 13 14 15 16 17 18 return loss (db) gain (db) frequency (ghz) s - parameters vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c gain irl orl 0 5 10 15 20 25 30 35 20 21 22 23 24 25 26 27 12 12.5 13 13.5 14 14.5 15 15.5 16 return loss (db) gain (db) frequency (ghz) s - parameters vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c gain irl orl 25 26 27 28 29 30 31 32 33 12 12.5 13 13.5 14 14.5 15 15.5 16 output power (dbm) frequency (ghz) power vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c psat p1db 640 660 680 700 720 740 760 780 800 820 840 860 12 14 16 18 20 22 24 26 28 30 32 34 - 10 - 8 - 6 - 4 - 2 0 2 4 6 8 10 12 14 id (ma) power (dbm), gain (db) input power (dbm) power, gain, id vs. input power @ 14 ghz vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c power gain id 16 18 20 22 24 26 28 30 32 12 12.5 13 13.5 14 14.5 15 15.5 16 pae (%) frequency (ghz) power added efficiency vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c pae @ psat pae @ p1db 0.01 0.1 1 10 - 5 0 5 10 15 20 25 30 35 vdiff (v) output power (dbm) power detector vs. pout vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c 12.7ghz 13.3ghz 14.4ghz 15.4ghz
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 5 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) 35 36 37 38 39 40 41 42 12 12.5 13 13.5 14 14.5 15 15.5 16 output toi (dbm) frequency (ghz) toi vs. frequency vs. pout/tone vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c pout/tone = 21dbm pout/tone = 20dbm pout/tone = 19dbm 0 1 2 3 4 5 6 7 8 9 10 12 13 14 15 16 noise figure (db) frequency (ghz) noise figure vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c 20 21 22 23 24 25 26 27 12 12.5 13 13.5 14 14.5 15 15.5 16 gain db frequency (ghz) gain vs. frequency vs. bias vd = 5 - 6 v, id = 600 - 700 ma, +25 0 c 6v 700ma 6v 650ma 6v 600ma 5v 650ma 25 26 27 28 29 30 31 32 33 12 12.5 13 13.5 14 14.5 15 15.5 16 psat (dbm) frequency (ghz) psat vs. frequency vs. bias vd = 5 - 6 v, id = 600 - 700 ma, +25 0 c 6v 700ma 6v 650ma 6v 600ma 5v 650ma - 60 - 55 - 50 - 45 - 40 - 35 - 30 - 25 - 20 12 13 14 15 16 17 18 19 20 21 22 23 24 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c 12.7ghz 13.3ghz 14.4ghz 15.4ghz - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 12 13 14 15 16 17 18 19 20 21 22 23 24 im5 (dbc) pout/tone (dbm) im5 vs. pout/tone vs. frequency vd = 6 v, id = 650 ma, vg = - 0.55 v typical, +25 0 c 12.7ghz 13.3ghz 14.4ghz 15.4ghz
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 6 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) 25 26 27 28 29 30 31 32 33 12 12.5 13 13.5 14 14.5 15 15.5 16 psat (dbm) frequency (ghz) psat vs. frequency vs. temperature vd = 6 v, id = 650 ma, vg = - 0.55 v typical - 40c +25c +85c 25 26 27 28 29 30 31 32 33 12 12.5 13 13.5 14 14.5 15 15.5 16 p1db (dbm) frequency (ghz) p1db vs. frequency vs. bias vd = 5 - 6 v, id = 650 - 700 ma, +25 0 c 6v 700ma 6v 650ma 6v 600ma 5v 650ma 35 36 37 38 39 40 41 42 12 12.5 13 13.5 14 14.5 15 15.5 16 otoi @ 20dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. bias vd = 5 - 6 v, id = 600 - 700 ma, +25 0 c 6v 700ma 6v 650ma 6v 600ma 5v 650ma 18 19 20 21 22 23 24 25 26 27 28 12 12.5 13 13.5 14 14.5 15 15.5 16 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 6 v, id = 650 ma, vg = - 0.55 v typical - 40c +25c +85c 25 26 27 28 29 30 31 32 33 12 12.5 13 13.5 14 14.5 15 15.5 16 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature vd = 6 v, id = 650 ma, vg = - 0.55 v typical - 40c +25c +85c 36 37 38 39 40 41 42 43 12 12.5 13 13.5 14 14.5 15 15.5 16 otoi @ 20dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. temperature vd = 6 v, id = 650 ma, vg = - 0.55 v typical - 40c +25c +85c
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 7 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit vg and vd can be biased from either side , and the no n - biased side can be left open . (vg are either pins 7 and 8 or pins 23 and 24, vd are either pins 10 and 11 or pins 20 and 21) bias - up procedure bias - down procedure vg set to - 1.5 v turn off rf supply vd set to +6 v reduce vg to - 1.5v. ensure id ~ 0 ma adjust vg more pos itive until quiescent id is 650ma . this will be ~ vg = - 0.5 5 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v the tga25 27 - sm will be marked with the 25 27 designator and a lot code marked below the part designator. the y y represents the last two digit s of the year the part was manufactured, the ww is the work week, and the xxxx is an au to - generated number . 100k ohms r2 + _ 6 v vdiff vdet vref 2527 yyww xxxx 1 2 3 9 8 7 4 5 6 12 11 10 18 17 16 15 14 13 22 23 24 19 20 21 100k ohms r1 rf in j1 rf out j2 vd = 6 v id = 650 ma c1 1 uf 100 pf c3 c2 1 uf 100 pf c4 vg = -0.55v typical
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 8 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? pin description pin symbol description 1, 2, 3, 5, 6, 13, 14, 15, 17 n/c no internal connection; must be grounded on pcb 4 rf i n input, matched to 50 ohms 7, 8, 23, 24 vg gate voltage. esd protection included; bias network is required; can be biased from either side (pins 7 and 8 or pins 23 and 24) , and non - biased side can be left opened ; se e application circuit on page 7 as an example. 9, 12 n/c no internal connection. can be grounded on pcb or left open 10, 11, 20 , 21 vd drain voltage. bias network is required; can be biased from either side (pins 10 and 11 or pins 20 and 21), and non - biased side can be left opened; se e application circuit on page 7 as an example. 16 rf out output, matched to 50 ohms 18 vref reference diode output voltage. 19 vdet detector diode output voltage. varies with rf output power. 22 gnd internal grounding; can be grounded on pcb or left open 25 gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see m ounting configuration on page 11 for suggested footprint. 1 2 3 9 8 7 4 5 6 12 11 10 18 17 16 15 14 13 22 23 24 19 20 21 25
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 9 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? applications information pc board layout top rf layer is 0.008 thick rogers ro4003, ? r = 3.38. metal layers are 1 - oz copper. micro strip 50 line detail : width = 0 . 0175. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount processes vary from company to company, careful process development is recommen ded. for further technical information, r efer to the tga 25 27 - sm product information page. bill of material ref des value description manufacturer part number c1 , c2 100 pf cap , 0402 , 50 v, 5%, cog various c3, c4 1 uf cap, 0603 , 25 v, 10 %, x5r various r1 , r2 10 0k ohms res , 0603, 1/16w, 5%, smd various c1 c3 c4 r1 r2 vg gnd vg vd vref vd vdet gnd c2
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 10 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information package information and dimensions all dimensions are in millimeters. this package is lead - free/rohs - complia nt with a copper alloy base (cda194), and the plating material on the leads is 100% matte sn . it is compatible with both lead - free (maximum 260 c reflow temperature) and tin - lead (maximum 245 c reflow temperature) soldering processes.
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 11 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information (cont . ) mounting configuration all dimensions are in millimeters (inches). n otes: 1. a heatsink underneath the area of the pcb for the mounted device is recommended for proper thermal operation. 2. ground / thermal vias are critical for the proper performan ce of this device. vias have a f inal plated thru diameter of .40 mm (.016 ). tape and reel information tape and reel specifications for this part are also available on the triquint website in the application notes section. standard t/r size = 5 00 pieces on a 7 x 0.5 reel. carrier and cover tape dimensions part feature symbol size (in) size (mm) cavity length a0 0.207 5.25 width b0 0.207 5.25 depth k0 0.0 43 1. 1 0 pitch p1 0. 315 8.0 0 distance between centerline cavity to perforation length direction p2 0.079 2.0 0 cavity to perforation width direction f 0.217 5.5 0 cover tape width c 0.374 9. 5 carrier tape width w 0. 472 12.0 .675 .675
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 12 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: tbd value: passes tbd min test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with the latest version of j - std - 020, lead free solder, 260 c this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: lead free halogen free (chlorine, bromine) antimony free tbbp - a (c 15 h 12 br 4 0 2 ) free pfos free svhc free msl rating level msl 1 at +260 c convection reflow the part is rated moisture sensitivity level msl 1 at 260c per jedec standard ipc/jedec j - std - 020. eccn us department of commerce 3a001.b.2. c recommended soldering temperature profile
tga 2527 - sm ku - band power amplifier preliminary data sheet: rev - 11/21 /1 1 - 13 of 13 - disclaimer: subject to change without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information ab out triquint: web: www.triquint.com tel: +1. 972.994.8465 email: info - sales@tqs.com fax: +1.972.99 4.8504 for technical questions and application information: email: info - networks@tqs. com important notice the information contained herein is believed to be reliable . triquint makes no warranties regarding the information contain ed herein . triquint assumes no responsibility or liability whatsoever for any of the information contained her ein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such inf ormation is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual pro perty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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